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chs5104 - 99f ref. : dschs51043168 - 17 jun 13 1 / 12 specifications subject to change without notice united monolithic semiconductors s.a.s. bat. charmille - parc silic - 10, avenue du qubec - 91140 vi llebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc - 4ghz reflective spdt gaas monolithic microwave ic description the chs5104 - 99f is a monolithic fet based reflective switch . it is designed for a wide range of applications, from defense to commercial communication systems. the circuit is manufactured with a phemt process, 0.25m gate length, via holes through the substrate, air bridges and electron beam gate lithography. it is available in chip form . main features 3 main electrical characteristics tamb. = + 25c symbol parameter min typ max unit freq frequency range dc 4 ghz il on state i nsertion loss 0.5 db isol off state i solation 35 db rl on state return loss 20 db i p 1db in put power @1db gain comp ression 30 dbm
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 2 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 electrical characteristics (1) tamb.= +25c, specifications are given for 50 ? symbol parameter condition min typ max unit freq frequency range dc 4 ghz il on state insertion loss (2 ) dc - 2ghz dc - 4ghz 0.25 0.5 db isol off state isolation dc - 2ghz dc - 4ghz 38 30 db rl on state input and output return l osses dc - 2ghz dc - 4ghz 20 13 db vh control voltage high level 0 0.5 vl control voltage low level - 8 - 5 v ip1db input power @1db gain comp ression . freq. >0.5ghz vl= - 5 v/ vh= 0v vl= - 8 v/vh= 0v 30 33 dbm ton / toff switching time 50% control to 90% rf, and 50% control to 10% rf 10 ns ic_ l c urrent consumption on the control supply voltage vh= 0v v l = - 5v v l = - 8v 40 20 200 a (1) these values are representative of on - board measurements with a typically bonding wire of 1nh at each rf ports. (2) v ariation rate of insertion loss with temperature in the range - 55c to +125c: - 0.002db/c
dc - 4ghz reflective spdt chs5104 - 99f ref. : dschs51043168 - 17 jun 13 3 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 absolute maximum ratings (1) tamb.= + 25c symbol parameter values unit vh high level control voltage 0.8 v vl low level control voltage - 10 v pin maximum peak input power overdrive (2) 38 dbm tj junction temperature 175 c ta operating temperature range - 55 to +125 c tstg storage temperature range - 55 to +150 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. s pdt truth table (complementary logic) pad a pad b electrical path rfc to rf1 electrical path rfc to rf2 v h v l on off v l v h off on
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 4 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c , bias conditions : vl = - 5v , vh = 0v, on - state ( rfc - rf1 path or rfc - rf2 path) freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 0.2 - 31.10 - 105.7 - 0.18 - 2.0 - 0.19 - 2.0 - 31.06 - 105.2 0.4 - 25.37 - 101.3 - 0.20 - 3.8 - 0.20 - 3.8 - 25.40 - 101.0 0.6 - 21.97 - 100.9 - 0.22 - 5.7 - 0.22 - 5.7 - 21.97 - 100.5 0.8 - 19.55 - 102.1 - 0.24 - 7.6 - 0.24 - 7.6 - 19.51 - 101.1 1.0 - 17.68 - 103.4 - 0.27 - 9.4 - 0.28 - 9.4 - 17.62 - 102.2 1.2 - 16.21 - 105.0 - 0.31 - 11.2 - 0.32 - 11.2 - 16.15 - 103.7 1.4 - 14.82 - 106.1 - 0.34 - 13.1 - 0.35 - 13.1 - 14.81 - 104.7 1.6 - 13.70 - 107.5 - 0.38 - 15.0 - 0.39 - 15.0 - 13.75 - 106.1 1.8 - 12.72 - 109.3 - 0.43 - 16.9 - 0.44 - 16.9 - 12.69 - 107.4 2.0 - 11.86 - 111.2 - 0.50 - 18.6 - 0.50 - 18.7 - 11.84 - 109.2 2.2 - 11.04 - 113.6 - 0.56 - 20.2 - 0.56 - 20.2 - 10.96 - 110.1 2.4 - 10.51 - 114.9 - 0.61 - 22.4 - 0.62 - 22.3 - 10.36 - 113.1 2.6 - 9.83 - 116.4 - 0.71 - 24.0 - 0.71 - 24.0 - 9.78 - 114.3 2.8 - 9.27 - 118.3 - 0.79 - 25.7 - 0.79 - 25.7 - 9.21 - 115.8 3.0 - 8.84 - 119.9 - 0.88 - 27.3 - 0.88 - 27.3 - 8.69 - 117.4 3.2 - 8.30 - 120.8 - 0.95 - 29.0 - 0.96 - 29.0 - 8.22 - 119.0 3.4 - 7.80 - 122.7 - 1.04 - 30.6 - 1.04 - 30.6 - 7.78 - 120.6 3.6 - 7.37 - 125.0 - 1.14 - 32.2 - 1.14 - 32.2 - 7.38 - 121.9 3.8 - 6.99 - 126.7 - 1.24 - 33.8 - 1.24 - 33.8 - 7.01 - 123.4 4.0 - 6.67 - 128.2 - 1.33 - 35.3 - 1.33 - 35.3 - 6.67 - 125.0 4.2 - 6.33 - 129.7 - 1.41 - 36.9 - 1.42 - 36.9 - 6.30 - 126.0 4.4 - 6.06 - 131.2 - 1.52 - 38.5 - 1.52 - 38.5 - 5.97 - 127.7 4.6 - 5.74 - 132.4 - 1.63 - 40.0 - 1.62 - 40.0 - 5.72 - 129.0 4.8 - 5.47 - 134.0 - 1.74 - 41.5 - 1.74 - 41.5 - 5.43 - 130.5 5.0 - 5.22 - 135.7 - 1.86 - 42.9 - 1.86 - 42.9 - 5.18 - 131.9 5.2 - 4.98 - 137.1 - 1.98 - 44.2 - 1.98 - 44.3 - 4.96 - 133.2 5.4 - 4.75 - 138.6 - 2.09 - 45.7 - 2.09 - 45.6 - 4.74 - 134.4 5.6 - 4.56 - 140.0 - 2.21 - 47.0 - 2.21 - 47.0 - 4.52 - 135.8 5.8 - 4.30 - 141.8 - 2.36 - 48.7 - 2.37 - 48.7 - 4.29 - 137.4 6.0 - 4.11 - 143.4 - 2.50 - 50.0 - 2.50 - 50.0 - 4.12 - 138.6 6.2 - 3.96 - 144.9 - 2.61 - 51.3 - 2.62 - 51.3 - 3.90 - 139.5 6.4 - 3.81 - 146.2 - 2.75 - 52.7 - 2.75 - 52.7 - 3.73 - 141.2 6.6 - 3.62 - 147.7 - 2.90 - 53.9 - 2.90 - 53.9 - 3.64 - 142.3 6.8 - 3.48 - 149.2 - 3.03 - 55.0 - 3.03 - 55.0 - 3.51 - 143.2 7.0 - 3.36 - 150.6 - 3.14 - 56.1 - 3.14 - 56.1 - 3.31 - 144.0 7.2 - 3.25 - 151.8 - 3.24 - 57.2 - 3.24 - 57.2 - 3.08 - 145.2 7.4 - 3.16 - 153.0 - 3.32 - 58.6 - 3.33 - 58.6 - 2.84 - 146.8 7.6 - 3.05 - 154.1 - 3.47 - 60.1 - 3.48 - 60.1 - 2.76 - 148.5 7.8 - 2.93 - 155.2 - 3.63 - 61.4 - 3.64 - 61.3 - 2.70 - 149.7 8.0 - 2.79 - 156.4 - 3.84 - 62.6 - 3.84 - 62.6 - 2.70 - 150.9
dc - 4ghz reflective spdt chs5104 - 99f ref. : dschs51043168 - 17 jun 13 5 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical on - wafer sij parameters tamb.= +25c, bias conditions : vl = - 5v , vh = 0v, off - state (rfc - rf1 path or rfc - rf2 path) freq (ghz) s11 (db) phs11 () s12 (db) phs12 () s21 (db) phs21 () s22 (db) phs22 () 0.2 - 30.73 100.9 - 64.80 106.1 - 64.19 106.1 - 0.43 179.2 0.4 - 30.14 - 92.1 - 54.91 99.1 - 54.97 99.7 - 0.44 178.8 0.6 - 22.46 - 96.0 - 52.98 102.6 - 53.03 103.3 - 0.45 178.4 0.8 - 19.43 - 103.5 - 50.24 104.5 - 50.29 105.0 - 0.45 177.9 1.0 - 17.33 - 107.1 - 48.14 107.7 - 48.13 108.1 - 0.46 177.4 1.2 - 16.19 - 111.2 - 46.26 110.0 - 46.21 109.9 - 0.46 176.9 1.4 - 15.12 - 113.1 - 44.41 109.5 - 44.42 109.4 - 0.47 176.4 1.6 - 14.10 - 117.4 - 43.16 110.2 - 43.19 110.4 - 0.48 175.9 1.8 - 13.98 - 119.5 - 41.95 114.5 - 41.95 114.3 - 0.47 175.5 2.0 - 13.77 - 117.1 - 40.51 115.3 - 40.52 115.3 - 0.47 175.0 2.2 - 12.85 - 115.3 - 40.03 118.2 - 40.04 118.1 - 0.43 175.3 2.4 - 11.97 - 113.6 - 38.27 118.0 - 38.25 118.1 - 0.42 173.5 2.6 - 11.31 - 116.5 - 37.16 118.6 - 37.14 118.6 - 0.49 173.3 2.8 - 10.70 - 116.0 - 36.12 118.8 - 36.12 118.7 - 0.49 172.8 3.0 - 9.79 - 115.2 - 34.96 119.9 - 34.99 119.9 - 0.53 172.3 3.2 - 9.13 - 118.1 - 33.68 116.7 - 33.70 116.8 - 0.54 172.1 3.4 - 8.40 - 119.8 - 32.97 114.4 - 33.00 114.5 - 0.50 171.7 3.6 - 7.48 - 121.1 - 32.56 112.2 - 32.55 112.3 - 0.48 171.2 3.8 - 7.16 - 124.3 - 31.96 114.5 - 31.96 114.5 - 0.51 170.7 4.0 - 6.50 - 128.4 - 31.25 112.2 - 31.25 112.1 - 0.51 170.1 4.2 - 6.61 - 131.8 - 30.79 113.1 - 30.79 113.0 - 0.51 169.7 4.4 - 6.58 - 133.9 - 30.10 114.0 - 30.08 114.0 - 0.51 168.9 4.6 - 6.52 - 133.8 - 29.37 113.0 - 29.37 113.0 - 0.54 168.6 4.8 - 6.45 - 133.8 - 28.69 113.5 - 28.68 113.5 - 0.54 168.0 5.0 - 5.99 - 133.8 - 27.96 111.8 - 27.96 111.9 - 0.55 167.5 5.2 - 5.83 - 133.9 - 27.30 111.4 - 27.30 111.4 - 0.56 167.1 5.4 - 5.25 - 133.8 - 26.64 109.2 - 26.62 109.2 - 0.57 166.6 5.6 - 4.82 - 135.6 - 26.15 107.5 - 26.15 107.6 - 0.56 166.0 5.8 - 4.59 - 137.3 - 25.72 106.5 - 25.71 106.5 - 0.58 165.5 6.0 - 4.47 - 139.5 - 25.31 106.1 - 25.31 106.0 - 0.58 165.0 6.2 - 4.13 - 139.8 - 24.72 104.6 - 24.73 104.6 - 0.58 164.6 6.4 - 3.79 - 142.2 - 24.32 102.5 - 24.33 102.4 - 0.58 163.9 6.6 - 3.42 - 143.8 - 23.93 100.4 - 23.93 100.4 - 0.62 163.4 6.8 - 3.53 - 146.2 - 23.66 100.6 - 23.64 100.6 - 0.63 163.0 7.0 - 3.29 - 148.5 - 23.38 99.2 - 23.38 99.2 - 0.59 162.8 7.2 - 3.39 - 151.1 - 23.18 99.6 - 23.17 99.7 - 0.53 162.2 7.4 - 3.36 - 150.2 - 22.48 98.9 - 22.48 98.8 - 0.44 161.3 7.6 - 3.33 - 151.7 - 22.15 98.5 - 22.15 98.5 - 0.52 160.0 7.8 - 3.06 - 153.3 - 21.81 95.9 - 21.80 95.9 - 0.61 159.4 8.0 - 2.91 - 153.4 - 21.50 94.1 - 21.51 94.1 - 0.73 159.1
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 6 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vl= - 5v , vh=0v o n state : s21 versus frequency o ff state : s21 versus frequency
dc - 4ghz reflective spdt chs5104 - 99f ref. : dschs51043168 - 17 jun 13 7 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 typical test fixture measurements tamb.= +25c, vl= - 5v, vh=0v o n state : input and output return loss versus frequency on state: input power at 1db gain compression (vl= - 5v / vh=0v) input return loss output return loss
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 8 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 mechanical data chip thickness: 70 m. chip size : 800 x 800 35m all dimensions are in micrometers
dc - 4ghz reflective spdt chs5104 - 99f ref. : dschs51043168 - 17 jun 13 9 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended assembly plan recommended rf bonding wires : length = 1.1mm / ?25m recommended circuit bonding table label type decoupling comment a, b control voltage not required spdt switch pad control rfc, rf1, rf2 rf access external dc block must be use d to ensure dc decoupling the mmic is dc coupled
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 10 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 evaluation mother board
dc - 4ghz reflective spdt chs5104 - 99f ref. : dschs51043168 - 17 jun 13 11 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 dc schematic note: to ensure dc decoupling on rf accesses, dc block must be added outside the mmic
chs5104 - 99f dc - 4ghz reflective spdt ref. : dschs51043168 - 17 jun 13 12 / 12 specifications subject to change without notice bat. charmille - parc silic - 10, avenue du qubec - 91140 villebon - sur - yvette - france tel.: +33 (0) 1 69 86 32 00 - fax: +33 (0) 1 69 86 34 34 recommended esd management refer to the application note an0020 available at http://www.ums - gaas.com for esd sensitivity and handling recommendations for the ums products. recommended environmental management ums products are compliant with the regulation in particular with the directives rohs n2011/65 and reach n1907/2006. more environmental data are available in the application note an0019 also available at http://www.u ms - gaas.com . ordering information chip form : chs5104 - 99f /00 information furnished is believed to be accurate and reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. united monolithic semicondu ctors s.a.s. products are not authorised for use as critical components in life support devices or systems without express written approval from united monolithic semiconductors s.a.s.

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